| Autor: |
Sung-Yong Chung, Ronghua Yu, Niu Jin, Si-Young Park, Berger, Paul R., Thompson, Phillip E. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; May2006, Vol. 27 Issue 5, p364-367, 4p, 3 Graphs |
| Abstrakt: |
This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency fro of 20.2 GHz with a peak current density of 218 kA/cm², a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3 × 10-7 Ω · cm² extracted from RF measurements was achieved by Ni silicidation through a P δ-doped quantum well by rapid thermal sintering at 430 °C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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