| Autor: |
Bernardi, A., Goñi, A. R., Alonso, M. I., Alsina, F., Scheel, H., Vaccaro, P. O., Saito, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/2006, Vol. 99 Issue 6, p063512, 6p, 2 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
We have experimentally investigated nanostructures consisting of free-standing microtubes with diameters in the micrometer range fabricated by rolling-up InGaAs/GaAs bilayers grown by molecular-beam epitaxy on a GaAs substrate. The formation of the microtubes is powered by the built-in strain in the InGaAs layer and they develop after releasing the bilayer structure from the substrate by selective etching. Through micro-Raman spectroscopy we were able to detect the residual strain of the microtube, which results in a frequency shift of phonon modes measured on the tube as compared with reference unstrained material. We developed a simple elastic model to describe the measured phonon frequency shifts, from which we estimate the strain status of the microtube. Results demonstrate the power of Raman spectroscopy as a diagnostic tool for engineering of strain-driven self-positioning microelectromechanical systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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