| Autor: |
Hoyland, J. D., Sands, D. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/15/2006, Vol. 99 Issue 6, p063516, 4p, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
The temperature dependent refractive index of amorphous silicon has been measured at a wavelength of 820 nm from room temperature up to nearly the melting point close to 1200 °C. The method employed is to use a single pulse from a XeCl excimer laser to heat the silicon without crystallizing it and to measure the transient reflectivity. This is then modeled by converting a calculated temperature profile into an effective multilayer structure and calculating the reflectivity using a transfer matrix formulation. The refractive index is optimized using simulated annealing. The real part of the refractive index is found to vary linearly with a temperature coefficient of 3.85×10-4 while the extinction coefficient is found to vary as exp(3.82×10-3T), with T=0 at room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
