Effect of Tensile Uniaxial. Stress on the Electron Transport Properties of Deeply Scaled FD-SOI n-Type MOSFETs.

Autor: Nayfeh, H. M., Singh, D. V., Hergenrother, J. M., Sleight, J. W., Ren, Z., Dokumaci, O., Black, L., Chidambarrao, D., Venigalla, R., Pan, J., Natzle, W., Tessier, B. L., Ott, J. A., Khare, M., Guarini, K. W., Leong, M., Haensch, W.
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Zdroj: IEEE Electron Device Letters; Apr2006, Vol. 27 Issue 4, p288-290, 2p, 1 Diagram, 2 Graphs
Abstrakt: In this letter, the effect of longitudinal uniaxial mechanical stress on electron mobility in high-performance fully depleted ultrathin silicon-on-insulator nFETs with a raised source/drain (RSD) architecture and channel lengths ranging from 1 µm (long channel) to 30 nm (deeply scaled) is reported. Longitudinal uniaxial stress in the channel was achieved using a stressed nitride contact liner technique. A dR/dL method was used to minimize errors in the mobility extraction due to uncertainties in external resistance and channel length. Significant mobility enhancement of 1.6-1.8 times was achieved despite the use of an RSD and strong channel doping of roughly 5 × 1018 cm-3, required for short-channel effect control. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index