| Autor: |
Chien-Chung Hung, Yuan-Jen Lee, Ming-Jer Kao, Yung-Hung Wang, Rei-Fu Huang, Wei-Chuan Chen, Young-Shying Chen, Kuei-Hung Shen, Ming-Jinn Tsai, Wen-Chin Lin, Denny Duan-Lee Tang, Shiuh Chao |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/13/2006, Vol. 88 Issue 11, p112501, 3p, 2 Diagrams, 2 Graphs |
| Abstrakt: |
In this work, a writing scheme with preceding negative pulse wave form for toggle magnetic random access memory (MRAM) is proposed to enhance the switching yield and enable a low current switching. The failure mechanism of toggle switching is studied by micromagnetic analysis. As a result of broadened operation window and reduced switching current, the scalability of MRAM is feasible with the robust toggle operation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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