| Autor: |
Karmarkar, Aditya P., White, Brad D., Buttari, Dario, Fleetwood, Daniel M., Schrimpf, Ronald D., Weller, Robert A., Brilison, Leonard J., Mishra, Umesh K. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2005 Part 1, Vol. 52 Issue 6, p2239-2244, 6p |
| Abstrakt: |
Proton irradiation decreases the doping concentration and increases the ideality factor and series resistance, but has very little effect on the Schottky barrier height in n-Gallium nitride Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher nonionizing energy loss. The displacement damage recovers during annealing. Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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