| Autor: |
Graf, D., Frommenwiler, M., Studerus, P., Ihn, T., Ensslin, K., Driscoll, D. C., Gossard, A. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/2006, Vol. 99 Issue 5, p053707, 7p, 3 Black and White Photographs, 4 Charts, 4 Graphs |
| Abstrakt: |
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for the constant and modulated voltages applied to the conductive tip of the scanning force microscope. All the lithography has been performed in noncontact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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