| Autor: |
Chaneliere, C., Autran, J. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1999, Vol. 86 Issue 1, p480, 7p, 3 Diagrams, 2 Charts, 10 Graphs |
| Abstrakt: |
Presents information on a study which investigated the conduction mechanism in tantalum oxide/silicon dioxide and tantalum oxide/silicon nitride stacked thin films on silicon. Experimental details; Simulation procedure; Expressions of the conduction mechanisms; Results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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