| Autor: |
M. F. Bain, B. M. Armstrong, H. S. Gamble |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; May2003, Vol. 14 Issue 5-7, p329-332, 4p |
| Abstrakt: |
Tungsten and tungsten nitride layers have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Tungsten layers deposited at low deposition temperatures T~150 °C using this method showed good uniformity over dielectric and silicon substrate areas. As the deposition temperature decreased, the silicon consumed during the deposition reaction decreased, at T~150 °C no silicon consumption was measurable. PECVD tungsten nitride layers were deposited directly on oxidized silicon substrates with no requirement for a nucleation layer. As the NH3 flow rate was increased, whilst maintaining all other parameters constant, deposited layers were found to change from metal tungsten to tungsten-rich amorphous layer to W2N. The resistivity of the layers was found to be high compared to published literature for higher-temperature deposited layers. The high resistivity is attributed to the incorporation of fluorine into the layer at low deposition temperatures. A deposition process was established for smooth amorphous tungsten-rich WxN layers at 150 °C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink