Electrical and microstructural properties of Bi2−xSbxTe and Bi2−xSbxTe2 foils obtained by the ultrarapid quenching process.

Autor: E. Kukharenka, N. Fréty, V. Shepelevich, J. Tédenac
Zdroj: Journal of Materials Science: Materials in Electronics; May2003, Vol. 14 Issue 5-7, p383-388, 6p
Abstrakt: This paper is concerned with the feasibility and reproducibility of the ultrarapid quenching process used to fabricate Bi2−xSbxTe and Bi2−xSbxTe2 alloys for thermoelectric applications. Microstructural properties of the materials, obtained in the shape of foils, were studied concerning the phase analysis, cell parameters, texture, and microstructure observations. The Bi2−xSbxTe alloys were found to have the (2 0  $$\bar 2$$ 3) texture. The (2 0  $$\bar 2$$ 4) texture, with an additional (1 1  $$\bar 2$$ 0) component for x values greater than 0.4, was predominant for Bi2−xSbxTe2 foils. The electrical properties of these materials were then characterized by measuring the Seebeck coefficient, Hall coefficient, and electrical resistivity. It was found that Bi2−xSbxTe foils changed from n- to p-type for an x-value of about 1.2. A maximum Seebeck coefficient, |α|, of 36×10−6 V K−1 was measured for Bi2Te. In the case of Bi2−xSbxTe2 foils, the change from n- to p-type was observed for an x value of about 1. A maximum Seebeck coefficient, |α|, of 32×10−6 V K−1, was measured for Bi1.4Sb0.6Te2. Measurements of the temperature-dependent electrical resistivity, Hall and Seebeck coefficients of the foils were carried out and the analysis revealed a semi-metallic behavior. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index