| Autor: |
N. Deo, M. F. Bain, J. H. Montgomery, H. S. Gamble |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jul2005, Vol. 16 Issue 7, p387-392, 6p |
| Abstrakt: |
Abstract Chemical Vapour Deposition (CVD) of cobalt was deposited from a liquid source precursor of cobalt tricarbonyl nitrosyl (Co(CO)3NO) on to oxidised < 100 > silicon wafers. The cobalt layers were deposited at 450∘C at 1.5 torr chamber pressure of hydrogen for 15 min processing time with various precursor flow rates. X-ray diffraction studies of the cobalt films reveal both hcp and fcc peaks. The vibrating sample magnetometer (VSM) yields coercivity (Hc) 167 Oe and 364 Oe for 46 nm and 30 nm thickness layers respectively at room temperature and squareness (S) Mr/Ms (remanence/saturation of magnetisation) value of 1. The study of magnetic properties of the cobalt suggests that magnetisation is dependent on grain size and therefore thickness. The grain size was observed by atomic force microscopy (AFM). Magnetic images were observed by magnetic force microscopy (MFM) and analyzed in terms of domain structure. The surface domain structure was recorded with the tip lift height 100 nm so that the magnetic interactions arising produced the topography effect. Where there is repulsive interaction the intensity is recorded as a bright region and where the interaction is attractive the intensity is recorded as a dark region. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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