Electronic Properties of Nanocrystalline-Si Embedded inAsymmetric Ultrathin SiO2 by In-Situ Fabrication Technique.

Autor: Wu WL Liang-Cai, Chen CK Kun-Ji, Yu YL Lin-Wei, Dai DM Min, Ma MZ Zhong-Yuan, Han HP Pei-Gao, Li LW Wei, Huang HX Xin-Fan
Zdroj: Chinese Physics Letters; Mar2005, Vol. 22 Issue 3, p733-736, 4p
Databáze: Complementary Index