Electronic Properties of Nanocrystalline-Si Embedded inAsymmetric Ultrathin SiO2 by In-Situ Fabrication Technique.
Autor: | Wu WL Liang-Cai, Chen CK Kun-Ji, Yu YL Lin-Wei, Dai DM Min, Ma MZ Zhong-Yuan, Han HP Pei-Gao, Li LW Wei, Huang HX Xin-Fan |
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Zdroj: | Chinese Physics Letters; Mar2005, Vol. 22 Issue 3, p733-736, 4p |
Databáze: | Complementary Index |
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