High accuracy method for Auger analysis of the composition of uncleaned silicon oxide surface.

Autor:	B. M. Kostishko, S. V. Appolonov, S. Ya. Salomatin
Zdroj:	Measurement Techniques; Oct2004, Vol. 47 Issue 10, p1032-1038, 7p
Abstrakt:	Abstract A new procedure is described for preparing standard spectra of the inverse self-convolution of the density of states for silicon oxide required for performing non-destructive quantitative Auger analysis of SiOx. Research results are used for determining the composition of silicon oxide formed at the surface of quantum threads in porous silicon with high-temperature annealing in a hydrogen atmosphere and during water etching. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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