| Autor: |
A. Vikarchuk, A. Volenko, Yu. Gamburg, V. Skidanenko |
| Zdroj: |
Russian Journal of Electrochemistry; Sep2005, Vol. 41 Issue 9, p996-1000, 5p |
| Abstrakt: |
Abstract When deposition is performed on substrates that have weak adhesion with the coating, at first noncrystalline clusters with deca- or icosahedral arrangement of atoms form on the substrate defects. Such clusters, when growing, develop into hemispherical islets, which in reality are probably spherical segments or semiellipsoid. The number of such islets reaches 105 per cm2 within the first 10–100 s of the growth and then does not alter. The islets acquire crystalline faceting when approximately 1 µm big. Further on, it is crystals with pentagonal symmetry that predominantly develop, the crystals having the tendency to a lateral growth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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