| Autor: |
Woong Sang Jahng, Francis, Anthony H., Hyunsik Moon, Nanos, John I., Curtis, M. David |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/27/2006, Vol. 88 Issue 9, p093504, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
The charge generation properties at all interfaces of a p/n junction, bilayer photodiode have been investigated by means of the photoaction spectrum (PAS) as a function of applied bias. The organic photodiode was fabricated with a low-glass transition temperature (Tg) polysiloxane with pendant hydrazone groups as the p-type material and a perylene diimide derivative as the n-type material. The PAS under short circuit and reverse bias showed an antibatic response at the high-energy region (3.0–3.5 eV), and a symbatic response at the low-energy region (2.0–3.0 eV). However, under forward bias, the PAS showed the opposite behavior. These results are interpreted in terms of the band structure of tin-doped indium oxide (ITO) that prevents effective photoinjection of electrons at the polymer/ITO interface and the relative energy levels of the constituent materials. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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