| Autor: |
Maresˇ, J. J., Hubík, P., Krisˇtofik, J., Kindl, D., Fanta, M., Nesládek, M., Williams, O., Gruen, D. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/27/2006, Vol. 88 Issue 9, p092107, 3p, 3 Graphs |
| Abstrakt: |
In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (∼4200 S m-1) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28 K and at 8 T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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