| Autor: |
Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Assayag, G. Ben, Claverie, A., Respaud, M., Dimitrakis, P., Normand, P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2006, Vol. 99 Issue 4, p044302, 9p, 2 Black and White Photographs, 1 Diagram, 7 Graphs |
| Abstrakt: |
The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals (NCs) fabricated by ultralow-energy ion implantation (1 keV) in thin silicon dioxide layers is reported. The NC characteristics (size, density, and coverage) have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature (900 °C) below the SiO2 viscoelastic point. An extended spherical Deal-Grove [J. Appl. Phys. 36, 3770 (1965)] model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects, due to oxide deformation, slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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