| Autor: |
Choong-Heui Chung, Yong-Hae Kim, Jaehyun Moon, Myung-Hee Lee, Jung Wook Lim, Sun Jin Yun, Dong-Jin Park, Dae-Won Kim, Jin Ho Lee |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/13/2006, Vol. 88 Issue 7, p073516, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Plasma-free defect passivation is achieved on polycrystalline silicon thin-film transistors fabricated below 150 °C by annealing and extracting H from SiNx:H interlayer dielectric. By annealing at 250 °C without a plasma application, VT and μFE were improved from 11.5 V to 3.5 V and from 86 cm2/V s to 212 cm2/V s, respectively. Improvement in performance is attributed to defect passivation by H diffusing out from SiNx:H. Dangling bonds and strained bonds can be acceptably passivated around 170 °C, and 205 °C, respectively. The activation energy for the diffusion of H into polycrystalline silicon was estimated to be 0.87 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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