| Autor: |
Molina-Aldareguia, J. M., Ocaña, I., Gonzalez, D., Elizalde, M. R., Sánchez, J. M., Martínez-Esnaola, J. M., Sevillano, J. Gil, Scherban, T., Pantuso, D., Sun, B., Xu, G., Miner, B., He, J., Maiz, J. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2006, Vol. 817 Issue 1, p104-109, 6p, 5 Diagrams, 2 Graphs |
| Abstrakt: |
The thermo-mechanical robustness of interconnect structures is a key reliability concern for integrated circuits. Cross-sectional nanoindentation (CSN) was developed to characterize the interfacial adhesion in blanket films deposited on silicon substrates. Recently, this technique has been adapted to the study of adhesion failure in real interconnect structures. The method has been applied to test chips simulating a portion of the interconnect structure and it has proven useful to study local adhesion effects in patterned structures. The test has been modelled using an FE code and cohesive elements developed in house to improve the understanding of the crack path and its interaction with the different structures present in the interconnect stack. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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