| Autor: |
Weinhardt, L., Fuchs, O., Peter, A., Umbach, E., Heske, C., Reichardt, J., Bär, M., Lauermann, I., Kötschau, I., Grimm, A., Sokoll, S., Lux-Steiner, M. Ch., Niesen, T. P., Visbeck, S., Karg, F. |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 2/21/2006, Vol. 124 Issue 7, p074705, 5p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
The Cu(In,Ga)(S,Se)2/Mo interface in thin-film solar cells has been investigated by surface-sensitive photoelectron spectroscopy, bulk-sensitive x-ray emission spectroscopy, and atomic force microscopy. It is possible to access this deeply buried interface by using a suitable lift-off technique, which allows us to investigate the back side of the absorber layer as well as the front side of the Mo back contact. We find a layer of Mo(S,Se)2 on the surface of the Mo back contact and a copper-poor stoichiometry at the back side of the Cu(In,Ga)(S,Se)2 absorber. Furthermore, we observe that the Na content at the Cu(In,Ga)(S,Se)2/Mo interface as well as at the inner grain boundaries in the back contact region is significantly lower than at the absorber front surface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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