| Autor: |
McMorrow, Dale, Melinger, Joseph S., Knudson, Alvin R., Buchner, Stephen, Ikossi-Anastasiou, Kiki, Moss, Steven C., Engelhardt, David, Childs, Timothy, Campbell, Arthur B. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec97 Part 1 of 3, Vol. 44 Issue 6, p2290, 8p, 1 Diagram, 9 Graphs |
| Abstrakt: |
Examines a methodology for the determination of the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers. Information on Lt GaAs devices used in this experiment; Details on measurements of multilayer structures; Theory of transient reflectivity measurements; Indepth look at the computer simulation results in relation to this topic. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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