Suppression of the surface-inversion layer of p-type InAs.
| Autor: | Lachenmann, S. G., Friedrich, I. |
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| Zdroj: | Journal of Applied Physics; 6/15/1999, Vol. 85 Issue 12, p8242, 5p, 2 Diagrams, 5 Graphs |
| Abstrakt: | Provides information on a study which examined the increase resistivity of spatially selectable regions on p-type InAs by epitaxial growth of a larger band-gap material. Description of the semiconductor structures; Details on the sample preparation; Experimental results and discussion; Conclusions. |
| Databáze: | Complementary Index |
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