| Autor: |
Thakur, J. S., Naik, R., Naik, V. M., Haddad, D., Auner, G. W., Lu, H., Schaff, W. J. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/15/2006, Vol. 99 Issue 2, p023504, 5p, 2 Graphs |
| Abstrakt: |
We investigate the temperature dependence of Hall mobility μ and carrier density Ne for thin InN films grown by molecular-beam epitaxy and plasma source molecular-beam epitaxy over three orders-of-magnitude difference in their carrier density: for the low-density film Ne=5.8×1017/cm3 and for the high-density film Ne=3.2×1020/cm3. In both the films, for temperature up to 300 K, a large temperature-independent concentration of carriers is observed. For higher temperatures, however, carrier density increases with temperature. The characteristic behavior of the mobility for the low-density film is different from that of the high-density film, particularly for temperatures less than 300 K. The low-density film shows a peak behavior in the mobility around 250 K in contrast to the temperature-independent mobility observed for the high-density film for T<300 K. We investigate theoretically the concentrations of donor, acceptor, and threading dislocations for both the films and also discussed various electron-scattering mechanisms which contribute to the mobility in these films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
