| Autor: |
Lihua Bai, Chunchuan Xu, Giles, N. C., Nagashio, K., Feigelson, R. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2006, Vol. 99 Issue 1, p013512, 5p, 7 Graphs |
| Abstrakt: |
CdGeAs2 crystals typically exhibit an absorption band near 5.5 μm that limits their use as a nonlinear frequency-conversion material in high-power infrared laser systems. This absorption band is related to the p-type nature of the as-grown bulk crystals. We correlate the electrical properties, as determined using van der Pauw Hall measurements, with optical absorption and photoluminescence data. The samples are all p type at room temperature with hole concentrations varying from 1×1015 to 2×1017 cm-3. High-absorption samples have two acceptor levels, while low-absorption samples have one deep acceptor. A linear correlation between absorption at 5.5 μm and hole concentration (p) is established. Also, we account for ambipolar conduction and explain possible discrepancies which may arise when comparing hole concentrations and optical data in low-absorption CdGeAs2 samples. We correlate the variation in activation energy with p, and also with NA and find excellent agreement with theory. An ionization energy is obtained for the deep acceptor. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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