| Autor: |
Gowda, Srivardhan, Mathur, Guru, Qiliang Li, Surthi, Shyam, Misra, Veena |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/26/2005, Vol. 87 Issue 26, p262115, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Lateral conductivity within a monolayer is a key factor in the implementation of emerging dense molecular memory devices since it determines the degree of cross talk between cells. Lateral interactions within a monolayer could also lead to loss of charge through defective sites. Existing characterization techniques are limited to probing the electrical communication between molecules and attached electrodes. In this paper we demonstrate a test structure consisting of n type and p type doped silicon islands to isolate vertical conduction from lateral conduction. This structure is a useful characterization tool for tailoring the intrinsic properties of the molecules for information storage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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