| Autor: |
Wontae Chang, Bellotti, Jeffrey A., Kirchoefer, Steven W., Pond, Jeffrey M. |
| Předmět: |
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| Zdroj: |
Integrated Ferroelectrics; 2005, Vol. 77 Issue 1, p173-187, 15p, 1 Black and White Photograph, 8 Graphs |
| Abstrakt: |
Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO 3 thin films epitaxially grown on (110) DyScO 3 substrates using molecular beam epitaxy (MBE) are extremely strained (i.e., ∼⃒ 1% in-plnae tensional strain) from 3.905 Å of bulk SrTiO 3 . The room temperature dielectric constant and its tuning of the films are observed to be 6000 and 75% with an electric field of 1 V/μ m, respectively. The control of strain in SrTiO 3 provides a basis for room temperature tunable microwave applications by elevating its phase transition peak to room temperature. Also, a significant in-plane anisotropy in dielectric constant and tuning was observed in these SrTiO 3 films. The observed in-plane anisotropic dielectric properties have been interpreted based on the phenomenological thermodynamics of film strain. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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