| Autor: |
Lebedev, A. A., Petrov, V. N., Titkov, A. N., Sorokin, L. M., Tregubova, A. S., Mosina, G. N., Cherenkov, A. E., Shcheglov, M. P. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Dec2005, Vol. 31 Issue 12, p997-1000, 4p |
| Abstrakt: |
Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The X-ray topography and X-ray diffraction data unambiguously confirm the formation of a 3C-SiC epilayer with twinned regions on the surface of a 6H-SiC substrate. The surface topography of epilayers was studied by atomic force microscopy (AFM), and the microstructure of a near-surface layer of the deposit was investigated by transmission electron microscopy (TEM). Using the AFM and TEM data, the presence of QDs (representing SiC nanoislands) is established, and their average dimensions and concentration are evaluated. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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