| Autor: |
Kounoike, K., Yamaguchi, M., Fujita, M., Asano, T., Nakanishi, J., Noda, S. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 12/8/2005, Vol. 41 Issue 25, p1402-1403, 2p |
| Abstrakt: |
Investigated is spontaneous emission (SE) from quantum dots (QDs) embedded within a 2D, photonic crystal (PC) slab, from the viewpoint of redistribution of the excited carriers. SE lifetime was found to increase up to 15-fold, close to theoretically predicted value, by the 2D photonic-bandgap effect and 3D carrier confinement effect of QDs. Emission efficiency in the vertical direction was simultaneously increased 15-fold by excited-carrier redistribution. An artificial point-defect cavity introduced within the PC led to cavity-mode emission at extremely low excitation-power densities <0.4 W · cm-2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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