| Autor: |
NG, C. Y., LAU, H. W., CHEN, T. P., TAN, O. K., LIM, V. S. W. |
| Předmět: |
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| Zdroj: |
International Journal of Nanoscience; Aug2005, Vol. 4 Issue 4, p709-715, 7p, 3 Graphs |
| Abstrakt: |
In this paper, we report a mapping of charge transport in silicon nanocrystals (nc-Si) embedded in SiO2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc-Si. We found that the charge diffusion from the charged nc-Si to the surrounding neighboring uncharged nc-Si is the dominant mechanism during charge decay. A longer decay time was observed for a wider area of stored charge (i.e. 3 charged spots) due to the diffusion of charges being blocked by the surrounding charged nc-Si. This result is consistent with the increase of charge cloud size during the charge decay and the lower charge change percentage for 3 charged spots. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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