| Autor: |
Shian-Jyh Lin, Chao-Sung Lai, Shian-Hau Liao, Chung-Yuan Lee, Pei-Ing Lee, Shi-Ming Chiang, Muh-Wang Liang |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Nov2005, Vol. 18 Issue 4, p644-648, 5p |
| Abstrakt: |
For the first time, a novel and simple trench bottle integrated process is demonstrated on dynamic random access memory (DRAM) manufacturing by selective liquid phase deposition (S-LPD) oxide. After photoresist (PR) filled into a deep trench (DT) and was recess etched at around 1.3 μm depth, LPD oxide can be selected as a deposit onto the DT sidewall but not as a deposit on the PR surface. This S-LPD oxide is formed by using hexa-fluosilic acid (H2 SiF6) and water without H3 BO3. After the PR is removed, the LPD oxide becomes a protective layer on DT upper portion. Thus, the DT bottom area can be enlarged to form a trench bottle by NH4 OH wet etching. Compared to conventional DT trench, 20% of capacitance was enhanced by this S-LPD process. This novel and low-cost method is for the first time demonstrated on 200-mm wafer 110-nm trench DRAM technology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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