| Autor: |
Bessolov, V. N., Davydov, V. Yu., Zhilyaev, Yu. V., Konenkova, E. V., Mosina, G. N., Raevskiǐ, S. D., Rodin, S. N., Sharofidinov, Sh., Shcheglov, M. P., Park, Hee Seok, Koike, Masayoshi |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Nov2005, Vol. 31 Issue 11, p915-918, 4p, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
Oriented GaN layers with a thickness of about 10 μm have been grown by hydride–chloride vapor-phase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth (FWHM) of the X-ray rocking curve of ωθ = 3– 4 mrad. The level of residual mechanical stresses in AlN buffer layers decreases with increasing temperature of epitaxial growth. The growth at 1080°C is accompanied by virtually complete relaxation of stresses caused by the lattice mismatch between AlN and Si. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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