GaN strain reduction by growth on compliant GaN-rich GaNP.

Autor:	Tsuda, Yuhzoh, Mouri, Hirokazu, Yuasa, Takayuki, Taneya, Mototaka, Hasuike, Noriyuki, Harima, Hiroshi
Předmět:	HETEROSTRUCTURES CHEMICAL vapor deposition VAPOR-plating PHOSPHORUS OPTICAL diffraction RAMAN effect SAPPHIRES
Zdroj:	Applied Physics Letters; 11/14/2005, Vol. 87 Issue 20, p201916, 3p, 1 Diagram, 3 Graphs
Abstrakt:	For investigating the strain reduction in a GaN layer on a sapphire substrate, double heterostructures of the upper GaN layer/GaN-rich GaNP interlayer as a compliant buffer layer/lower GaN layer were grown by metalorganic chemical vapor deposition. It has been confirmed that wafer bending of the double heterostructure reduces on increasing the mole fraction of phosphorus incorporated into GaNP. Further, the results of x-ray diffraction and Raman scattering analysis revealed that strain relaxation occurs abruptly on the GaNP interlayer and that nonuniform distortion of the upper GaN layer scarcely distributes within the thickness. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu