| Autor: |
Bolotov, Leonid, Okui, Toshiko, Kanayama, Toshihiko |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/26/2005, Vol. 87 Issue 13, p133107, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Scanning tunneling microscopy and spectroscopy were used to investigate a variation of resonant electron tunneling peaks of C60 molecules placed on oxidized Si(100) surfaces that had different impurity profiles. C60-derived resonance peak energy systematically varied depending on the position in the depletion region of lateral Si p-n junctions, indicating that the peak energy can be used for carrier density profiling. The peak energy was determined for uniformly doped substrates with a wide range of phosphorus and boron concentrations. The results were supported by a simple calculation of a one-dimensional tunnel diode. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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