| Autor: |
ISMAIL, RAID A., ABDULRAZAQ, OMAR A., YAHYA, KHALID Z. |
| Předmět: |
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| Zdroj: |
Surface Review & Letters; Aug2005, Vol. 12 Issue 4, p515-518, 4p, 1 Color Photograph, 1 Chart, 6 Graphs |
| Abstrakt: |
Conductive transparent In2O3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200°C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grown In2O3 films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm2 · V-1 · s-1. These results are compared with those of In2O3 films prepared by other methods. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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