| Autor: |
Weaver, B. D., Boos, J. B., Papanicolaou, N. A., Bennett, B. R., Park, D., Bass, R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/24/2005, Vol. 87 Issue 17, p173501, 3p, 4 Graphs |
| Abstrakt: |
InAs/AlSb-based high-electron-mobility transistors (HEMTs) were irradiated with 2 MeV protons. Radiation damage caused the source-drain current Ids to decrease nearly linearly with fluence [uppercase_phi_synonym] at a rate of Δ[Ids([uppercase_phi_synonym])/Ids(0)]/Δ[uppercase_phi_synonym]≈7×10-16 cm2. Radiation-induced decreases in Ids have been observed for other HEMT material systems, and have been attributed to high-efficiency defect-induced scattering of carriers out of the two-dimensional electron gas. However, in the InAs/AlSb system the rate of decrease of Ids is about 140 times less than that for typical GaAs/AlGaAs HEMTs. An explanation is presented in which the high radiation tolerance of InAs/AlSb HEMTs is related to carrier reinjection and the unusually large energy offset between the AlSb barriers and the InAs quantum well. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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