| Autor: |
Vitiello, Miriam S., Scamarcio, Gaetano, Spagnolo, Vincenzo, Revin, Dmitry G., Cockburn, John, Steer, Matthew J., Airey, Robert J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/2005, Vol. 98 Issue 8, p086106, 3p, 4 Graphs |
| Abstrakt: |
We have investigated the band-to-band photoluminescence of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade devices operating at λ∼4.3 μm, based either on normally grown or nominally As-terminated interfaces. This technique allowed us to probe the spatial distribution of conduction electrons as a function of the applied voltage and to correlate the quantum design of devices with their thermal performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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