| Autor: |
Oh, D. C., Suzuki, T., Kim, J. J., Makino, H., Hanada, T., Yao, T., Ko, H. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/17/2005, Vol. 87 Issue 16, p162104, 3p, 3 Graphs |
| Abstrakt: |
We have investigated the electrical properties of ZnO/GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO/GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO/GaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnO/GaN, where the concentration approaches ∼1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnO/GaN heterointerface. It is suggested that the ZnO/GaN heterostructure is a very promising material for the application to heterojunction transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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