| Autor: |
Kukushkin, S. A., Osipov, A. V., Gordeev, S. K., Korchagina, S. B. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Oct2005, Vol. 31 Issue 10, p859-861, 3p, 1 Graph |
| Abstrakt: |
A method of silicon carbide (SiC) deposition onto silicon via a nonequilibrium disilicon carbide (Si2C) vapor phase is proposed, theoretically described, and experimentally verified. Estimates obtained using thermochemical calculations show that a sufficiently large number of SiC molecules, which are transported by mobile Si2C species, are obtained using this method on the silicon surface. It is established that homogeneous epitaxial SiC layers can be grown on a Si(111) substrate surface. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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