| Autor: |
Hatzopoulos, Argyrios T., Tassis, Dimitrios H., Hastas, Nikolaos A., Dimitriadis, Charalabos A., Kamarinos, George |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Oct2005, Vol. 52 Issue 10, p2182-2187, 6p |
| Abstrakt: |
Hot-carrier effects in n-channel polysilicon thin-film transistors (TFTs), with channel width W = 10 μm and length L = 10 μm, are investigated. An analytical model predicting the post-stress performance is presented, by treating the channel of the stressed device as a series combination of a damaged region extended over a length ΔL beside the drain and a region of length L - ΔL having the properties of the unstressed device. The apparent channel mobility is derived considering that the mobility of the damaged region is described with the mobility of amorphous Si TFTs, whereas the mobility of the undamaged region is described with the mobility of the virgin device. From the evolution of the static characteristics during stress, the properties of the damaged region with stress time are investigated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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