| Autor: |
M Ya Valakh, V O Yukhymchuk, V M Dzhagan, O S Lytvyn, A G Milekhin, A I Nikiforov, O P Pchelyakov, F Alsina and J Pascual |
| Předmět: |
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| Zdroj: |
Nanotechnology; 9/1/2005, Vol. 16 Issue 9, p1464-1468, 5p |
| Abstrakt: |
We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the GeGe frequency range for nanoislands grown at substrate temperatures ranging in the interval 300500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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