| Autor: |
Gundlach, D. J., Pernstich, K. P., Wilckens, G., Grüter, M., Haas, S., Batlogg, B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/2005, Vol. 98 Issue 6, p064502, 8p, 1 Chart, 7 Graphs |
| Abstrakt: |
We report on n-channel organic thin-film transistors (OTFTs) with field-effect mobility comparable to that typically reported for p-channel OTFTs fabricated from pentacene. The OTFTs were fabricated on oxidized silicon wafers using N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI–C13H27) as the semiconductor and with Au, Cr, Al, and LiF/Al source and drain contacts. Accumulation mode n-channel transistor operation is demonstrated for all contact metals despite the large differences in their work functions. High field-effect mobility near 0.6 cm2/V s and large Ion/Ioff of 107 were achieved. Device performance is sufficient to demonstrate pentacene/PTCDI–C13H27 TFT complementary inverters with record gain. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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