| Autor: |
Vishnyakov, N. V., Vikhrov, S. P., Mishustin, V. G., Avachev, A. P., Utochkin, I. G., Popov, A. A. |
| Předmět: |
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| Zdroj: |
Semiconductors; Oct2005, Vol. 39 Issue 10, p1147-1152, 6p, 3 Diagrams |
| Abstrakt: |
The formation of potential barriers in undoped disordered semiconductors is considered. A generalized model of the potential barrier formation in such structures is examined using the example of a metal–amorphous hydrogenated silicon contact. It is shown that the properties of barriers in disordered semiconductors are determined by the energy distribution of the localized states in the mobility gap. An analytical expression for the electric field and potential in the space-charge region of a disordered semiconductor is obtained and a new method for the formation of surface quasi-ohmic contacts is suggested. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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