| Autor: |
Davidyuk, G. E., Olekseyuk, I. D., Shavarova, G. P., Gorgut, G. P. |
| Předmět: |
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| Zdroj: |
Inorganic Materials; Sep2005, Vol. 41 Issue 9, p923-926, 4p, 1 Chart, 1 Graph |
| Abstrakt: |
Single crystals of AgGaSe2-GeSe2 γ-solid solutions are investigated. The AgxGaxGe1 − xSe2 (0.12 ≤ x ≤ 0.25) solid solutions are anisotropic p-type semiconductors with a 290-K band gap of about 0.26 eV. The high defect density in the crystals results in static disordering and the formation of density-of-states tails in the band gap, reducing their transmittance. Cu doping leads to bleaching in the optical window of the crystals (visible through near-IR spectral region). A model is proposed for the interaction between the dopant atoms and structural defects in the crystals. The radiation hardness and laser damage threshold of AgxGaxGe1 − xSe2 are evaluated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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