| Autor: |
Kim, D. W., Lee, H. Y., Yeom, G. Y., Sung, Y. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/2005, Vol. 98 Issue 5, p053102, 4p, 1 Diagram, 2 Graphs |
| Abstrakt: |
In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78×10-4 Ω cm and the measured optical transmittance at 460 nm was 96.8% after the annealing process. In this condition, about 1×10-5 Ω cm2 of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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