| Autor: |
Kanechika, Masakazu, Sugimoto, Noriaki, Mitsushima, Yasuichi |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 9/1/2005, Vol. 98 Issue 5, p054907, 5p, 1 Black and White Photograph, 3 Diagrams, 6 Graphs |
| Abstrakt: |
We have developed a silicon tip, fabricated by highly selective anisotropic dry etching using oxygen precipitates (SiOx, x∼2) in a silicon substrate as the etching mask. The gated field-emission device with the single silicon tip was characterized, under a pressure of 10-8-Torr range after an aging process. Although the turn-on voltage of as low as 20 V was obtained, it fluctuated in a range of 20–30 V. In order to reveal the origin of this fluctuation, we investigated the fluctuations of the emitting area (α) and the tip radius (r), using the Fowler-Nordheim theory. As a result, these two were found to fluctuate with a good relation of α∝r2e1.1r, assuming that the work function is constant. This demands that the fluctuation of the turn-on voltage was caused by the variations in the emitting area and the tip radius, not in the work function. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
