Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer.

Autor: Liu, H. X., Wu, Stephen Y., Singh, R. K., Newman, N.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/2005, Vol. 98 Issue 4, p046106, 3p, 3 Graphs
Abstrakt: We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr–GaN/antiferromagnetic MnO interface. [ABSTRACT FROM AUTHOR]
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