Autor: |
Liu, H. X., Wu, Stephen Y., Singh, R. K., Newman, N. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 8/15/2005, Vol. 98 Issue 4, p046106, 3p, 3 Graphs |
Abstrakt: |
We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr–GaN/antiferromagnetic MnO interface. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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