| Autor: |
V R Balakrishnan, Vikram Kumar and Subhasis Ghosh |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Aug2005, Vol. 20 Issue 8, p783-787, 5p |
| Abstrakt: |
Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic (CDLTS) studies of an AlGaAs/InGaAs pseudomorphic high electron mobility transistor (p-HEMT) were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low-frequency negative transconductance dispersion as well as the apparent hole like peaks observed in the CDLTS spectra. This model incorporates a time-dependent change in the two-dimensional electron gas mobility due to ionized impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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