| Autor: |
Bolotov, Leonid, Okui, Toshiko, Kanayama, Toshihiko |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2005, Vol. 788 Issue 1, p232-235, 4p |
| Abstrakt: |
We investigated resonant electron tunneling peaks of individual C60 molecules placed on oxidized silicon surfaces for uniform-doped wafers employing scanning tunneling microscopy and spectroscopy. Systematic increase of the C60-derived resonance peak energy with decrease of boron concentration and with the position in the depletion region of lateral p-n junctions both indicate that the peak energy can be used for quantitative evaluation of carrier density with high spatial resolution. The observed peak energy variation is supported by a calculation within a one-dimensional tunnel diode model. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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