| Autor: |
Khrypunov, G. S., Dobrozhan, A. I., Kirichenko, M. V., Zaitsev, R. V., Khrypunov, M. S., Meriuts, A. V. |
| Zdroj: |
Journal of Nano- & Electronic Physics; 2024, Vol. 16 Issue 6, p1-6, 6p |
| Abstrakt: |
A physical concept of the simple, economical, and compact method for determining the wavelength of pulsed laser diode radiation has been proposed. In this method, the bifacial thin film solar cell (SC) SnOx:F/CdS/CdTe/ITO is used as a sensor that detects the wavelength of incident pulsed radiation. When implementing the method, SnOx:F/CdS/CdTe/ITO solar cell is illuminated from the back and front sides by pulsed radiation of the laser diode. Constant direct voltage biases in the 0-1.2 V range are applied to the solar cell when illuminated from the front side. When illuminating the solar cell from the back side, along with a similar direct voltage bias, reverse voltage biases in the 0-1.5 V range are applied. The wavelength is determined by comparing, with the help of a computer program, the obtained values of the short-circuit current, which is generated during the irradiation of the SC, with the previously obtained numerical database of the spectral dependence of the short-circuit current of the given SC. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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