Dislocation mediated surface morphology of GaN.
| Autor: | Heying, B., Tarsa, E.J. |
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| Zdroj: | Journal of Applied Physics; 5/1/1999, Vol. 85 Issue 9, p6470, 7p, 2 Black and White Photographs, 2 Diagrams |
| Abstrakt: | Reports on a study on surfaces of gallium nitride films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Use of force microscopy; Experimental procedure; Results. |
| Databáze: | Complementary Index |
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